Semiconductor devices comprising carbon-doped silicon nitride and related methods
US12279423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2022 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Mar 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure that comprises tiers of alternating dielectric levels and conductive levels and a carbon-doped silicon nitride over the tiers of the staircase structure. The carbon-doped silicon nitride excludes silicon carbon nitride. A method of forming the semiconductor device structure comprises forming stairs in a staircase structure comprising alternating dielectric levels and conductive levels. A carbon-doped silicon nitride is formed over the stairs, an oxide material is formed over the carbon-doped silicon nitride, and openings are formed in the oxide material. The openings extend to the carbon-doped silicon nitride. The carbon-doped silicon nitride is removed to extend the openings into the conductive levels of the staircase structure. Additional methods are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.