Matthew Park
23Patents
4h-index
55Co-inventors
62Inventor score
Filing activity: Feb 7, 2007 → Mar 8, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10014309B2 | Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor | Electricity | 30 | Active |
| US7715474B2 | Decision feedback equalizer (DFE) architecture | Electricity | 16 | Active |
| US10263007B2 | Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor | Electricity | 11 | Active |
| US7792185B2 | Methods and apparatus for calibrating output voltage levels associated with current-integrating summing amplifier | Electricity | 10 | Active |
| US7954166B2 | Independently-addressable, self-correcting inking for cantilever arrays | Physics | 4 | Active |
| US10453748B2 | Methods of forming semiconductor device structures including stair step structures | Electricity | 4 | Active |
| US10157933B2 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Electricity | 2 | Active |
| US11114379B2 | Integrated circuitry, memory integrated circuitry, and methods used in forming integrated circuitry | Electricity | 2 | Active |
| US12069074B2 | Threat representation and automated tracking and analysis | Electricity | 1 | Active |
| US12279423B2 | Semiconductor devices comprising carbon-doped silicon nitride and related methods | Electricity | 0 | Active |
| US12406926B2 | Microelectronic devices including stadium structures | Electricity | 0 | Active |
| US10720446B2 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Electricity | 0 | Active |
| US12171661B1 | Devices for fatigue testing medical devices and systems and methods for use | Human Necessities | 0 | Active |
| US11177271B2 | Device, a method used in forming a circuit structure, a method used in forming an array of elevationally-extending transistors and a circuit structure adjacent thereto | Electricity | 0 | Active |
| US11937429B2 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Electricity | 0 | Active |
| US11282845B2 | Semiconductor devices comprising carbon-doped silicon nitride and related methods | Electricity | 0 | Active |
| US11239252B2 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Electricity | 0 | Active |
| US11069598B2 | Memory arrays and methods used in forming a memory array and conductive through-array-vias (TAVs) | Electricity | 0 | Active |
| US11889695B2 | Device, a method used in forming a circuit structure, a method used in forming an array of elevationally-extending transistors and a circuit structure adjacent thereto | Electricity | 0 | Active |
| US11945112B2 | Robotic platforms to mimic papillary muscle motion ex vivo | Physics | 0 | Active |
| US10672657B2 | Semiconductor device structures including stair step structures, and related semiconductor devices | Electricity | 0 | Active |
| US10727242B2 | Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor | Electricity | 0 | Active |
| US11705385B2 | Memory arrays and methods used in forming a memory array and conductive through-array-vias (TAVs) | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.