Control of plasma formation by RF coupling structures
US12283462B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2021 |
| Grant date | Apr 22, 2025 |
| Priority date | — |
| Expiry date | Aug 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3211
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus for forming a plasma may include one or more coupling ports to accept a radiofrequency (RF) current. The apparatus may additionally include one or more coupling structures which may include one or more conductive loops to permit the RF current to conduct from at least a first portion of the one or more coupling ports to at least a second port of the one or more coupling ports. The one or more conductive loops may each be configured to exhibit a first value of inductance in the absence of the plasma and to exhibit a second value of inductance in the presence of the plasma. The one or more coupling structures may each include a reactive element, in which each reactive element is coupled to a corresponding one of the one or more conductive loops so as to form a corresponding number of coupling structures. Each RF coupling structure may have a resonant frequency that increases in response to the presence of the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.