Etching method and etching apparatus
US12283489B2 · kind B2 · utility
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2References
23Claims
0Family size
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Key dates
| Filing date | Oct 28, 2020 |
| Grant date | Apr 22, 2025 |
| Priority date | — |
| Expiry date | Sep 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68714
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method includes: providing, within a chamber, a substrate that includes at least a silicon-containing material and a molybdenum film or a tungsten film which is in an exposed state, and selectively etching the molybdenum film or the tungsten film relative to the silicon-containing material by supplying, into the chamber, an oxidation gas and a hexafluoride gas as an etching gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.