Molded semiconductor package having an embedded inlay
US12283538B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2022 |
| Grant date | Apr 22, 2025 |
| Priority date | — |
| Expiry date | May 27, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/051
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A molded semiconductor package includes: a mold compound; a metal substrate partly embedded in the mold compound; at least one first metal lead partly embedded in the mold compound; an inlay embedded in the mold compound, the inlay comprising a semiconductor die embedded in an electrically insulating body, a first metal structure attached to a first side of the semiconductor die, and a second metal structure attached to a second side of the semiconductor die; and a metal clip at least partly embedded in the mold compound and connecting the second metal structure to the at least one first metal lead. The semiconductor die has a maximum junction temperature higher than a glass transition temperature of the mold compound, the electrically insulating body has a glass transition temperature at or above the maximum junction temperature of the semiconductor die, and the metal substrate is attached to the first metal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.