Magnetic memory device
US12284811B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 10, 2021 |
| Grant date | Apr 22, 2025 |
| Priority date | — |
| Expiry date | May 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/10
Abstract
According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a fixed magnetization direction, a second magnetic layer having a variable magnetization direction, a non-magnetic layer provided between the first magnetic layer and the second magnetic layer, a molybdenum (Mo) layer provided on an opposite side of the non-magnetic layer with respect to the second magnetic layer, and an oxide layer provided between the second magnetic layer and the molybdenum (Mo) layer and containing a predetermined element selected from a rare earth element, silicon (Si) and aluminum (Al).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.