Lateral diffusion metal oxide semiconductor device and method for fabricating the same
US12288818B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Mar 30, 2023 |
| Grant date | Apr 29, 2025 |
| Priority date | — |
| Expiry date | Jun 3, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
A lateral diffusion metal oxide semiconductor (LDMOS) device includes a first fin-shaped structure on a substrate, a shallow trench isolation (STI) adjacent to the first fin-shaped structure, a first gate structure on the first fin-shaped structure, a spacer adjacent to the first gate structure, and a contact field plate adjacent to the first gate structure and directly on the STI. Preferably, a sidewall of the spacer is aligned with a sidewall of the first fin-shaped structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.