Nitride-based semiconductor device and method for manufacturing the same

US12289899B2 · kind B2 · utility

Assignee

• INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD. · CN

Inventors

• Chao Yang · Beijing, CN
• Chunhua Zhou · Suzhou, CN
• Yong Liu · Yichun City, CN
• Qiyue Zhao · Suzhou, CN
• Jingyu Shen · Tuji, CN

Key dates

• Filing date: Dec 17, 2021
• Grant date: Apr 29, 2025
• Expiry date: Dec 24, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a third nitride-based semiconductor layer, a passivation layer, a gate insulator layer, and a gate electrode. The first nitride-based semiconductor layer includes at least two doped barrier regions defining an aperture between the doped barrier regions. The second nitride-based semiconductor layer is disposed over first nitride-based semiconductor layer. The third nitride-based semiconductor layer is disposed on the second nitride-based semiconductor layer and has a bandgap higher than a bandgap of the second nitride-based semiconductor layer. The passivation layer is disposed over the third nitride-based semiconductor layer, in which a vertical projection of the passivation layer on the first nitride-based semiconductor layer is spaced apart from the aperture. The gate insulator layer is disposed over the third nitride-based semiconductor layer. The gate electrode is disposed over the gate insulator layer and aligns with the aperture.