Semiconductor structure having hybrid bonding pad
US12293982B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 14, 2022 |
| Grant date | May 6, 2025 |
| Priority date | — |
| Expiry date | Oct 15, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/80896
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a method of manufacturing a semiconductor structure are provided. The semiconductor structure includes a first semiconductor substrate, a first conductive pad, and a first hybrid bonding pad. The first conductive pad is over the first semiconductor substrate. The first hybrid bonding pad is on the first conductive pad. The first hybrid bonding pad includes nano-twins copper. A thickness of the first hybrid bonding pad is less than a thickness of the first conductive pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.