Method of manufacturing tsemiconductor device having bonding structure
US12295137B2 · kind B2 · utility
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2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2023 |
| Grant date | May 6, 2025 |
| Priority date | — |
| Expiry date | Jan 19, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/488
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a bonding structure, a bit line, and a word line. The bonding structure is disposed on the substrate. The bit line is disposed on the bonding structure. The channel layer is disposed on the bit line. The word line surrounds the channel layer. The bonding structure includes a dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.