Compounds and methods for selectively forming metal-containing films
US12297537B2 · kind B2 · utility
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46Claims
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Key dates
| Filing date | Nov 3, 2020 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Aug 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02304
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Compounds for selectively forming metal-containing films are provided. Methods of forming metal-containing films are also provided. The methods include forming a blocking layer, for example, on a first substrate surface, by a first deposition process and forming the metal-containing film, for example, on a second substrate surface, by a second deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.