Pre-charging bit lines through charge-sharing
US12300312B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2023 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Nov 10, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a static random access memory (SRAM) device is provided. The SRAM device includes a memory cell, a bit line couple to the memory cell, a voltage supply line coupled to the memory cell, a control circuitry. The control circuitry is configured to charge a voltage supply line while the voltage supply line is electrically isolated from a bit line. A portion of the charge is transferred from the voltage supply line to the bit line. The voltage supply line is recharged while the voltage supply line is electrically isolated from the bit line storing the transferred portion of the charge. The memory cell is accessed using the recharge on the voltage supply line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.