Inventor · Campbell, CA, US

Mahmut Sinangil

36Patents
4h-index
28Co-inventors
59Inventor score

Filing activity: Dec 10, 2012 → Nov 10, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9208900B2 System and method for performing address-based SRAM access assists Physics 13 Active
US8861290B2 System and method for performing SRAM write assist Physics 13 Active
US10803928B2 Low voltage memory device Physics 8 Active
US9418714B2 Sense amplifier with transistor threshold compensation Physics 5 Active
US9886996B2 SRAM cell for interleaved wordline scheme Electricity 4 Active
US10847214B2 Low voltage bit-cell Physics 4 Active
US9922700B2 Memory read stability enhancement with short segmented bit line architecture Physics 4 Active
US11404114B2 Low voltage memory device Physics 2 Active
US11322195B2 Compute in memory system Electricity 2 Active
US10153038B2 Memory read stability enhancement with short segmented bit line architecture Physics 2 Active
US11238906B2 Series of parallel sensing operations for multi-level cells Physics 2 Active
US10770131B2 SRAM cell for interleaved wordline scheme Electricity 1 Active
US10510403B2 Memory read stability enhancement with short segmented bit line architecture Physics 1 Active
US12131800B2 Physically unclonable cell using dual-interlocking and error correction techniques Physics 1 Active
US9762216B1 Level shifter circuit using boosting circuit Electricity 1 Active
US11763882B2 Low voltage memory device Physics 1 Active
US9245601B2 High-density latch arrays Electricity 0 Active
US10410715B2 Pre-charging bit lines through charge-sharing Physics 0 Active
US11848047B2 Pre-charging bit lines through charge-sharing Physics 0 Active
US9922701B2 Pre-charging bit lines through charge-sharing Physics 0 Active
US11562779B2 Bit line secondary drive circuit and method Physics 0 Active
US10276231B2 SRAM cell for interleaved wordline scheme Electricity 0 Active
US12272420B2 Series of parallel sensing operations for multi-level cells Physics 0 Active
US12300312B2 Pre-charging bit lines through charge-sharing Physics 0 Active
US12073869B2 Compute in memory system Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.