Method for protecting an optoelectronic device against electrostatic discharges
US12300521B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2020 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Dec 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/08145
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of protecting optoelectronic devices against electrostatic discharges, each optoelectronic device comprising an optoelectronic circuit comprising at least one optoelectronic component from among a light-emitting diode or a photodiode. The method comprises forming a first wafer, comprising a plurality of copies of the optoelectronic circuit, bonding the first wafer to a support, separating the optoelectronic devices from one another, and removing from the support a plurality of optoelectronic devices from among said optoelectronic devices by means of a gripping system, wherein the gripping system comprises at least one system for protecting optoelectronic devices against electrostatic discharges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.