Semiconductor device with metal silicide layer
US12300654B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 4, 2022 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Aug 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/048
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a method of manufacturing a semiconductor device is provided. A first surface of a metal silicide layer may be treated with an oxidizing agent to oxidize metal silicide protrusions on the first surface of the metal silicide layer. After treating the first surface with the oxidizing agent, the first surface may be treated with a cleaning agent to remove oxide over the metal silicide protrusions, wherein a size of a metal silicide protrusion of the metal silicide protrusions after treating the first surface with the cleaning agent is smaller than a size of the metal silicide protrusion prior to treating the first surface with the oxidizing agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.