In-situ adsorbate formation for plasma etch process
US12308212B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Sep 30, 2022 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Aug 2, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3346
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of processing a substrate that includes: flowing dioxygen (O2) and an adsorbate precursor into a plasma processing chamber that is configured to hold the substrate including an organic layer and a patterned etch mask; sustaining an oxygen-rich plasma while flowing the O2 and the adsorbate precursor, oxygen species from the O2 and the adsorbate precursor reacting under the oxygen-rich plasma to form an adsorbate; and exposing the substrate to the oxygen-rich plasma to form a recess in the organic layer, where the adsorbate forms a sidewall passivation layer in the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.