Method for forming thermal oxide film on semiconductor substrate
US12308225B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2021 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Apr 10, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a thermal oxide film on a semiconductor substrate, including: a correlation acquisition step of providing a plurality of semiconductor substrates; a substrate cleaning step of cleaning a semiconductor substrate; a thermal oxide film thickness estimation step of determining a constitution of a chemical oxide film formed on the semiconductor substrate by the cleaning in the substrate cleaning step and, based on the correlation, estimating a thickness of a thermal oxide film on a hypothesis that the semiconductor substrate has been subjected to a thermal oxidization treatment conditions in the correlation acquisition step; a thermal oxidization treatment condition determination step of determining thermal oxidization treatment conditions based on the thermal oxidization treatment conditions in the correlation acquisition step so that the thermal oxide film is a predetermined thickness; and a thermal oxide film formation step of forming a thermal oxide film on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.