Plasma processing method and plasma processing apparatus
US12308241B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2021 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Jul 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing apparatus includes: a chamber having at least one gas inlet and at least one gas outlet; a substrate support disposed in the chamber; and a controller. The controller causes (a) placing a substrate on the substrate support, the substrate including a base layer and a first layer formed on the base layer; (b) etching the first layer to form a recess in the first layer; (c) when determined that the recess satisfies a predetermined condition, forming a first film on a bottom surface of the recess by forming an inhibitor on the bottom surface of the recess, a predetermined gas species being not adsorbed to the first film; (c) after (b), forming a second film on a side wall of the recess using the predetermined gas species as a precursor gas; and (d) etching the first layer through the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.