Patent · US Active

Semiconductor device with compartment shield formed from metal bars and manufacturing method thereof

US12308327B2 · kind B2 · utility

0Cited by
4References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 15, 2024
Grant dateMay 20, 2025
Priority date
Expiry dateApr 15, 2044

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2221/68368
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device has a substrate and first and second electrical component disposed over the substrate. A first metal bar is disposed over the substrate between the first electrical component and second electrical component. The first metal bar is formed by disposing a mask over a carrier. An opening is formed in the mask and a metal layer is sputtered over the mask. The mask is removed to leave the metal layer within the opening as the first metal bar. The first metal bar can be stored in a tape-and-reel.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.