Optoelectronic device comprising light-emitting diodes having multiple quantum wells
US12310147B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2020 |
| Grant date | May 20, 2025 |
| Priority date | — |
| Expiry date | Mar 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optoelectronic device including at least first and second light-emitting diodes, each including a first P-type doped semiconductor portion and a second N-type doped semiconductor portion, an active area including multiple quantum wells between the first and second semiconductor portions, a conductive layer covering the lateral walls of the active area and of at least a portion of the first semiconductor portion, and an insulating layer interposed between the lateral walls of the active area and of at least a portion of the conductive layer. The device includes means for controlling the conductive layer of the first light-emitting diode independently from the conductive layer of the second light-emitting diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.