Surface acoustic wave device including transducer in dielectric between a piezoelectric material and a substrate
US12316298B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2023 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Apr 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/725
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A production method for a surface acoustic wave device comprises the following steps: a step of providing a piezoelectric substrate comprising a transducer arranged on the main front face; a step of depositing a dielectric encapsulation layer on the main front face of the piezoelectric substrate and on the transducer; and a step of assembling the dielectric encapsulation layer with the main front face of a support substrate having a coefficient of thermal expansion less than that of the piezoelectric substrate. In additional embodiments, a surface acoustic wave device comprises a layer of piezoelectric material equipped with a transducer on a main front face, arranged on a substrate support of which the coefficient of thermal expansion is less than that of the piezoelectric material. The transducer is arranged in a dielectric encapsulation layer, between the layer of piezoelectric material and the support substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.