Methods of forming 3D NAND structures with decreased pitch

US12317493B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Thomas Jongwan Kwon · Dublin, US
• Xinhai Han · Santa Clara, US

Key dates

• Filing date: Nov 28, 2022
• Grant date: May 27, 2025
• Expiry date: Dec 30, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693

Abstract

Methods of forming 3D NAND devices are discussed. Some embodiments form 3D NAND devices with increased cell density. Some embodiments form 3D NAND devices with decreased vertical and/or later pitch between cells. Some embodiments form 3D NAND devices with smaller CD memory holes. Some embodiments form 3D NAND devices with silicon layer between alternating oxide and nitride materials.