Method of fabricating semiconductor device having epitaxial structure
US12317547B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Jul 4, 2023 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Oct 11, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
Abstract
A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure and an epitaxial structure. The gate structure is disposed on the substrate, and the epitaxial structure is disposed in the substrate, at one side of the gate structure. The epitaxial structure includes a portion being protruded from a top surface of the substrate, and the portion includes a discontinuous sidewall, with a distance between a turning point of the discontinuous sidewalls and the gate structure being a greatest distance between the epitaxial structure and the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.