Anomalous plasma event detection and mitigation in semiconductor processing
US12322582B2 · kind B2 · utility
0Cited by
7References
19Claims
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Key dates
| Filing date | Feb 7, 2020 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Oct 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/0025
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In particular embodiments, anomalous plasma events, which may include formation of an electric arc in a semiconductor processing chamber, may be detected and mitigated. In certain embodiments, a method may include detecting an optical signal emitted by a plasma, converting the optical signal to a voltage signal, and forming an adjusted voltage signal. Responsive to determining that the changes associated with the adjusted voltage signal exceed a threshold, an output power of an RF signal coupled to the chamber may be adjusted. Such adjustment may mitigate formation of the anomalous plasma event occurring within the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.