Patent · US Active

Sublimation in forming a semiconductor

US12322585B2 · kind B2 · utility

0Cited by
4References
10Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 25, 2021
Grant dateJun 3, 2025
Priority date
Expiry dateDec 3, 2041

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2201/0109
  • WIPO fieldChemical engineering
  • WIPO sectorChemistry

Abstract

The present disclosure includes apparatuses and methods related to sublimation in forming a semiconductor. In an example, a method may include forming a sacrificial material in an opening of a structure, wherein the sacrificial material displaces a solvent used in a wet clean operation and removing the sacrificial material via sublimation by exposing the sacrificial material to sub-atmospheric pressure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.