Methods for thermal treatment of a semiconductor layer in semiconductor device
US12322596B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 1, 2021 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Dec 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Methods for thermal treatment on a semiconductor device is disclosed. One method includes obtaining a pattern of a treatment area having amorphous silicon, aligning a laser beam with the treatment area, the laser beam in a focused laser spot having a spot area equal to or greater than the treatment area, and performing a laser anneal on the treatment area by emitting the laser beam towards the treatment area for a treatment period.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.