Alternating hardmasks for tight-pitch line formation
US12322601B2 · kind B2 · utility
0Cited by
31References
22Claims
0Family size
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Key dates
| Filing date | Feb 14, 2023 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Feb 14, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming fins includes forming a three-color hardmask fin pattern on a fin base layer. The three-color hardmask fin pattern includes hardmask fins of three mutually selectively etchable compositions. Some of the fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color and that leaves at least one fin of the first color behind. The fins of the second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.