Semiconductor device and method for manufacturing a semiconductor device

US12322717B2 · kind B2 · utility

Assignees

• AMS AG · AT
• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Jens Hofrichter · Eindhoven, NL
• Manuel Kaschowitz · Premstätten, AT
• Bernhard Poelzl · Premstätten, AT
• Karl Rohracher · Graz, AT
• Amandine Jouve · Grenoble, FR
• Viorel Balan · La Buisse, FR
• Romain Crochemore · Premstätten, AT
• Frank Fournel · Meylan, FR
• Sylvain Maitrejean · Paris, FR

Key dates

• Filing date: Mar 30, 2020
• Grant date: Jun 3, 2025
• Expiry date: May 6, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/1461
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device comprises a substrate body with a surface, a conductor comprising a conductor material covering at least part of the surface, and a dielectric that is arranged on a part of the surface that is not covered by the conductor. Therein, the conductor is in contact with the substrate body, the conductor and the dielectric form a layer, and a bonding surface of the layer has surface topographies of less than 10 nm, with the bonding surface facing away from the substrate body. Moreover, the semiconductor device is free of a diffusion barrier.