Alignment mark for MRAM device and method
US12324164B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2021 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | May 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
Structures and formation methods of a semiconductor structure are provided. The semiconductor structure includes an insulating layer covering a device region and an alignment mark region of a semiconductor substrate. A conductive feature is formed in the insulating layer and corresponds to the device region. An alignment mark structure is formed in the first insulating layer and corresponds to the alignment mark region. The alignment mark structure includes a first conductive layer, a second conductive layer covering the first conductive layer, and a first magnetic tunnel junction (MTJ) stack layer covering the second conductive layer. The first conductive layer and the conductive feature are made of the same material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.