Semiconductor device and manufacture method thereof
US12324198B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 23, 2022 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Nov 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of fabricating the semiconductor device are provided. The method includes: forming a first bottom isolation layer and a second bottom isolation layer in a substrate, the thickness of the second bottom isolation layer being less than that of the first bottom isolation layer; and forming, on the a first active area in the substrate, a first gate structure extending to the first bottom isolation layer and forming, on a second active area in the substrate, a second gate structure extending to the second bottom isolation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.