Semiconductor substrate polishing method
US12327719B2 · kind B2 · utility
0Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2021 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Feb 9, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of polishing a semiconductor substrate, including: a) a step of multiple implantations of ions from an upper surface of the substrate, to modify the material of an upper portion of the substrate, the multiple implantation step comprising a plurality of successive implantations under different respective implantation orientations; and b) a step of selective removal of the upper portion of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.