Etching gas mixture and method of manufacturing integrated circuit device using the same
US12327731B2 · kind B2 · utility
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6References
20Claims
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Key dates
| Filing date | Jan 25, 2023 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Jan 2, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching gas mixture includes a nitrogen-containing compound and an inert gas. To manufacture an integrated circuit (IC) device, a silicon-containing film on a substrate is etched by using plasma generated from the etching gas mixture, and thus a hole is formed in the silicon-containing film. The nitrogen-containing compound is selected from a compound represented by Formula 1 and a compound represented by Formula 2: (R1)C≡N [Formula 1]
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.