Heat sink for face bonded semiconductor device
US12327776B1 · kind B1 · utility
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1References
17Claims
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Key dates
| Filing date | Mar 27, 2024 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Mar 27, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/80896
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first substrate, a second substrate bonded to the first substrate, and at least one thermally conductive structure that extends through a portion of the first substrate and a portion of the second substrate and is vertically aligned with an active region of the first substrate. The at least one thermally conductive structure is electrically insulated from electrically active structures in the semiconductor device. The thermally conductive structure acts as a heat sink to transfer heat from the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.