Semiconductor device
US12328924B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 7, 2021 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Oct 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer provided on the first nitride semiconductor layer, the second nitride semiconductor layer having a band gap larger than the first nitride semiconductor layer, a first electrode provided on the second nitride semiconductor layer, a second electrode provided on the second nitride semiconductor layer, a first insulating film provided between the first electrode and the second electrode on the second nitride semiconductor layer, the first insulating film being in connect with the second nitride semiconductor layer and including a first insulating material, a second insulating film provided on the second nitride semiconductor layer between the first electrode and the first insulating film, on the first insulating film, and on the second nitride semiconductor layer between the first insulating film and the second electrode, the second insulating film including a second insulating material, a third electrode provided on the second insulating film between the first electrode and the first insulating film, and a fourth electrode including a first electrode portion and a second electrode…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.