Optoelectronic semiconductor structure comprising a p-type injection layer based on InGaN

US12328975B2 · kind B2 · utility

Assignee

• SOITEC · FR

Inventors

• David Sotta · Grenoble, FR
• Mariia Rozhavskaia · Grenoble, FR
• Benjamin Damilano · Paris, FR

Key dates

• Filing date: Feb 25, 2020
• Grant date: Jun 10, 2025
• Expiry date: Dec 20, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/815

Abstract

An optoelectronic semiconductor structure comprises an InGaN-based active layer disposed between an n-type injection layer and a p-type injection layer, the p-type injection layer comprising a first InGaN layer having a thickness between 50 and 350 nm and, disposed on the first layer, a second layer having a GaN surface portion.