Method for determining defectiveness of pattern based on after development image
US12332573B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2020 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Jun 7, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Described herein is a method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate and determining etch conditions based on the trained model. The method includes obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location; and training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image. In an embodiment, the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.