Batch-type apparatus for atomic layer etching (ALE), and ALE method and semiconductor device manufacturing method based on the same apparatus
US12334308B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2022 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Jan 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A batch-type apparatus for atomic layer etching (ALE), which is capable of ALE-processing several wafers at the same time, and an ALE method and a semiconductor device manufacturing method based on the batch-type apparatus, are provided. The batch-type apparatus for ALE includes a wafer stacking container in which a plurality of wafers are arranged in a vertical direction, an inner tube extending in the vertical direction, a plurality of nozzles arranged in a first outer portion in the inner tube in a horizontal direction, and a heater surrounding the inner tube and configured to adjust a temperature in the inner tube, wherein gas injection holes are formed corresponding to a height of the plurality of wafers in each of the plurality of nozzles, and a gas outlet is formed in a second outer portion in the inner tube, opposite to the first outer portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.