Electronic device including two-dimensional material and method of fabricating the same
US12336259B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2021 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Sep 16, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0242
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are an electronic device including a two-dimensional material, and a method of fabricating the electronic device. The electronic device may include a first metal layer including a transition metal, a second metal layer on the first metal layer and including gold (Au), and a two-dimensional material layer between the first metal layer and the second metal layer. The two-dimensional material layer may include a transition metal dichalcogenide (TMD). The two-dimensional material layer may be formed as a chalcogen element diffuses into the second metal layer and reacts with the transition metal of the first metal layer adjacent to the second metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.