Method for computational metrology and inspection for patterns to be manufactured on a substrate
US12340495B2 · kind B2 · utility
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2References
11Claims
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Key dates
| Filing date | Aug 2, 2022 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Aug 2, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods include generating a scanner aerial image using a neural network, where the scanner aerial image is generated using a mask inspection image that has been generated by a mask inspection machine. Embodiments also include training the neural network with a set of images, such as with a simulated scanner aerial image and another image selected from a simulated mask inspection image, a simulated Critical Dimension Scanning Electron Microscope (CD-SEM) image, a simulated scanner emulator image and a simulated actinic mask inspection image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.