Methods of selective oxidation on rapid thermal processing (RTP) chamber with active steam generation
US12341032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2024 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | May 2, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B3/0047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of methods of performing a selective oxidation process on non-metal surfaces are provided herein. In some embodiments, a method of performing a selective oxidation process on non-metal surfaces includes: forming a first mixture of a carrier gas and a liquid in a mixer having a mixing block coupled to one or more control valves with a mixing line disposed therebetween; flowing the first mixture from the mixer to a vaporizer to vaporize the first mixture outside of an RTP chamber; and delivering the vaporized first mixture to the RTP chamber via a gas delivery line to expose a substrate disposed in the RTP chamber with the vaporized first mixture to perform a selective oxidation process on the substrate at a temperature of about 500 to about 1100 degrees Celsius.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.