Interconnect structure, electronic device including the same, and method of manufacturing interconnect structure
US12341063B2 · kind B2 · utility
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32Claims
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Key dates
| Filing date | Dec 8, 2021 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Aug 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76864
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are an interconnect structure, an electronic device including the same, and a method of manufacturing the interconnect structure. The interconnect structure includes a dielectric layer; a conductive interconnect on the dielectric layer; and a graphene cap layer on the conductive interconnect. The graphene cap layer contains graphene quantum dots, has a carbon content of 80 at % or more, and has an oxygen content of 15 at % or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.