Silicon precursor compounds and method for forming silicon-containing films
US12347672B2 · kind B2 · utility
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Key dates
| Filing date | Apr 21, 2022 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Apr 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.