Methods for controlling contact resistance in cobalt-titanium structures
US12347695B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Jul 5, 2022 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Jan 10, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.