Lateral bipolar transistors
US12349374B2 · kind B2 · utility
0Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 2024 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | May 10, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/281
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base having at least one sidewall with a gradient concentration of semiconductor material; an emitter on a first side of the extrinsic base; and a collector on a second side of the extrinsic base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.