High-voltage semiconductor device structures
US12349459B1 · kind B1 · utility
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16Claims
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Key dates
| Filing date | Oct 7, 2024 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Oct 7, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
Abstract
Device structures for a high-voltage semiconductor device and methods of forming such device structures. The structure comprises a semiconductor substrate including a trench, and a field-effect transistor including a first and second source/drain regions in the semiconductor substrate, a gate dielectric inside the trench, and a gate on the gate dielectric. The gate and the gate dielectric are disposed laterally between the first and second source/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.