Method for manufacturing an OxRAM type resistive memory cell
US12349605B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Jun 11, 2020 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Nov 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an OxRAM type resistive memory cell including a silicon oxide layer, the method including determining manufacturing parameter values enabling the resistive memory cell to have an initial resistance between 107Ω and 3·109Ω; and forming on a substrate a stack successively including a first electrode, the silicon oxide layer and a second electrode, by applying the manufacturing parameter values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.