Low forming voltage OxRAM memory cell, and associated method of manufacture
US12349609B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 17, 2020 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | May 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
An OxRAM resistive memory cell includes a lower electrode, an upper electrode, and an active layer which extends between the lower electrode and the upper electrode. The active layer includes a layer of a first electrically insulating oxide, wherein an electrically conductive filament can be formed, then subsequently broken and reformed several times successively. The upper electrode includes a reservoir layer, capable of receiving oxygen, which includes an upper part made of a metal and a lower part made of a second oxide, the second oxide being an oxide of the metal and including a proportion of oxygen such that the second oxide is electrically conductive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.