Plasma processing method and plasma processing apparatus
US12354837B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2023 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Jun 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3348
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing method includes: providing a substrate including a silicon-containing film and a mask film having an opening pattern, on a substrate support; and etching the silicon-containing film using the mask film as a mask, with a plasma generated by a plasma generator provided in the chamber. The etching includes: supplying a processing gas containing one or more gases including carbon, hydrogen, and fluorine into the chamber; generating a plasma from the processing gas by supplying a source RF signal to the plasma generator; and supplying a bias RF signal to the substrate support unit. In the etching, the silicon-containing film is etched by at least hydrogen fluoride generated from the processing gas, while forming a carbon-containing film on at least a part of a surface of the mask film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.