First layer interconnect first on carrier approach for EMIB patch
US12354992B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2022 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Sep 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A patch structure of an integrated circuit package comprises a core having a first side facing downwards and a second side facing upwards. A first solder resist (SR) layer is formed on the first side of the core, wherein the first SR layer comprises a first layer interconnect (FLI) and has a first set of one or more microbumps thereon to bond to one or more logic die. A second solder resist (SR) layer is formed on the second side of the core, wherein the second SR layer has a second set of one or more microbumps thereon to bond with a substrate. One or more bridge dies includes a respective sets of bumps, wherein the one or more bridge dies is disposed flipped over within the core such that the respective sets of bumps face downward and connect to the first set of one or more microbumps in the FLI.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.