Magnetic memory device
US12356866B2 · kind B2 · utility
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39References
11Claims
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Key dates
| Filing date | Sep 10, 2021 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Jun 13, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
Abstract
According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, a non-magnetic layer provided between the first magnetic layer and the second magnetic layer, and an oxide layer provided adjacent to the first magnetic layer, the first magnetic layer being provided between the non-magnetic layer and the oxide layer, and the oxide layer containing a rare earth element, boron (B), and oxygen (O).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.